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| SUM110N06-06 New Product Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.006 ID (A) 110a D TrenchFETr Power MOSFET D 175_C Junction Temperature APPLICATIONS D Automotive Applications Such As: - ABS - EPS - Motor Drives D Industrial D TO-263 G G DS S N-Channel MOSFET Top View SUM110N06-06 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cd PD TJ, Tstg TC = 25_C TC = 125_C ID IDM IAR EAR Symbol VGS Limit "20 110a 78 300 70 245 230c 3.75 -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72082 S-22246--Rev. A, 25-Nov-02 www.vishay.com PCB Mountd Symbol RthJA RthJC Limit 40 0.65 Unit _C/W _ 1 SUM110N06-06 Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 48 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 48 V, VGS = 0 V, TJ = 125_C VDS = 48 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 120 0.0048 0.006 0.0105 0.013 S W 60 V 2.0 3.0 4.0 "100 1 50 250 A m mA nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 0.47 W ID ^ 75 A, VGEN = 10 V, RG = 2.5 W VDS = 30 V, VGS = 10 V, ID = 75 A VGS = 0 V, VDS = 25 V, f = 1 MHz 6000 720 370 90 30 25 20 90 40 10 30 140 60 20 ns 135 nC pF Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 75 A, di/dt = 100 A/ms m IF = 75 A , VGS = 0 V 1.0 75 3 0.113 110 A 300 1.5 125 5 0.313 V ns A mC Notes a. Pulse test: pulse width v 300 msec, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2 Document Number: 72082 S-22246--Rev. A, 25-Nov-02 SUM110N06-06 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 6V 200 I D - Drain Current (A) VGS = 10 thru 7 V I D - Drain Current (A) 200 250 Vishay Siliconix Transfer Characteristics 150 150 100 5V 50 3, 4 V 0 0 2 4 6 8 10 100 TC = 125_C 50 25_C -55 _C 0 0 1 2 3 4 5 6 7 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 150 TC = -55_C 120 g fs - Transconductance (S) 25_C r DS(on) - On-Resistance ( ) 0.008 0.010 On-Resistance vs. Drain Current 90 125_C 0.006 VGS = 10 V 60 0.004 30 0.002 0 0 15 30 45 60 75 90 0.000 0 20 40 60 80 100 120 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Capacitance 8000 7000 V GS - Gate-to-Source Voltage (V) 6000 5000 4000 3000 2000 Coss 1000 0 Crss 0 10 20 30 40 50 60 Ciss 16 20 Gate Charge VDS = 30 V ID = 75 A C - Capacitance (pF) 12 8 4 0 0 30 60 90 120 150 180 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 72082 S-22246--Rev. A, 25-Nov-02 www.vishay.com 3 SUM110N06-06 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 30 A r DS(on) - On-Resistance (W) (Normalized) 2.0 I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 1.5 10 TJ = 150_C TJ = 25_C 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Avalanche Current vs. Time 1000 80 Drain Source Breakdown vs. Junction Temperature 76 100 I Dav (a) IAV (A) @ TA = 25_C 10 V (BR)DSS (V) 72 ID = 10 mA 68 1 IAV (A) @ TA = 150_C 64 0.1 0.00001 0.0001 0.001 0.01 0.1 1 60 -50 -25 0 25 50 75 100 125 150 175 tin (Sec) TJ - Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600 4 Document Number: 72082 S-22246--Rev. A, 25-Nov-02 SUM110N06-06 New Product THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 120 1000 10 ms 100 I D - Drain Current (A) 80 I D - Drain Current (A) Limited by rDS(on) 10 1 ms 10 ms dc, 100 ms 1 20 TC = 25_C Single Pulse 100 ms Vishay Siliconix Safe Operating Area, Junction-to-Case 100 60 40 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 TC - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0.05 0.01 10- 4 10- 3 10- 2 Square Wave Pulse Duration (sec) 10- 1 1 Document Number: 72082 S-22246--Rev. A, 25-Nov-02 www.vishay.com 5 |
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